Manufacturer Part Number
FDG6332C-F085
Manufacturer
onsemi
Introduction
Dual N-Channel and P-Channel MOSFET Array
Designed for Automotive and Industrial Applications
Product Features and Performance
Optimized for low on-resistance (Rds(on))
Capable of handling up to 700mA continuous drain current
Low input capacitance (Ciss) for fast switching
Logic-level gate drive capability
Product Advantages
Compact 6-pin TSSOP (SC-88) package
RoHS3 compliant
Qualified to AEC-Q101 standard for automotive applications
Excellent thermal performance and power handling
Key Technical Parameters
Drain-to-Source Voltage (Vds): 20V
On-Resistance (Rds(on)): 300mΩ @ 700mA, 4.5V
Input Capacitance (Ciss): 113pF @ 10V
Gate Threshold Voltage (Vgs(th)): 1.5V @ 250μA
Gate Charge (Qg): 1.5nC @ 4.5V
Quality and Safety Features
Compliant with RoHS3 directive
Qualified to AEC-Q101 standard for automotive applications
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of automotive and industrial applications
Can be used as a replacement or upgrade for similar MOSFET devices
Application Areas
Automotive electronics
Industrial control systems
Power management circuits
General purpose switching applications
Product Lifecycle
Currently in active production
No plans for discontinuation at this time
Replacement or upgraded versions may become available in the future
Key Reasons to Choose This Product
Optimized for low on-resistance and fast switching
Qualified for automotive and industrial applications
Compact and thermally efficient package
Reliable and compliant with industry standards
Versatile and compatible with a wide range of applications