Manufacturer Part Number
FDG6335N
Manufacturer
onsemi
Introduction
The FDG6335N is a dual N-channel MOSFET transistor from onsemi's PowerTrench series. It is designed for a variety of switching and amplification applications.
Product Features and Performance
Dual N-channel MOSFET configuration
20V drain-to-source voltage rating
300mW maximum power dissipation
700mA continuous drain current
300mOhm maximum on-resistance at 700mA, 4.5V
113pF maximum input capacitance at 10V
4nC maximum gate charge at 4.5V
Logic-level gate threshold voltage of 1.5V at 250μA
Product Advantages
Compact SC-88 (SC-70-6) package for space-efficient design
Low on-resistance for efficient power switching
Wide operating temperature range of -55°C to 150°C
RoHS3 compliant for environmental compliance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
On-Resistance (Rds(on)): 300mOhm
Drain Current (Id): 700mA
Input Capacitance (Ciss): 113pF
Gate Charge (Qg): 1.4nC
Gate Threshold Voltage (Vgs(th)): 1.5V
Quality and Safety Features
Compliant with RoHS3 directives for hazardous substance restrictions
Designed and manufactured to high quality standards
Compatibility
Surface mount package (SC-88/SC-70-6) compatible with standard SMT assembly processes
Application Areas
Switching and amplification circuits
Power management applications
Portable electronics
Industrial controls
Product Lifecycle
Current production part, no discontinuation plans
Replacement or upgrade parts available from onsemi
Key Reasons to Choose this Product
Compact, space-efficient packaging
Low on-resistance for efficient power switching
Wide operating temperature range
RoHS3 compliance for environmental regulations
Reliable performance from a trusted manufacturer