Manufacturer Part Number
FDD16AN08A0
Manufacturer
onsemi
Introduction
The FDD16AN08A0 is a high-performance N-channel power MOSFET transistor from onsemi, designed for use in a wide range of power electronics applications.
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 75V
Very low on-resistance (Rds(on)) of 16mΩ @ 50A, 10V
Continuous Drain Current (Id) of 9A at 25°C (Ta) and 50A at 25°C (Tc)
Power Dissipation (Pd) of 135W at 25°C (Tc)
Wide Operating Temperature Range of -55°C to 175°C (TJ)
Fast switching performance with low gate charge (Qg) of 47nC @ 10V
Optimized for high-efficiency, high-frequency switching applications
Product Advantages
Excellent efficiency and power density
High reliability and ruggedness
Compact TO-252AA (DPak) surface-mount package
Key Technical Parameters
Vdss: 75V
Vgs(max): ±20V
Rds(on) (max): 16mΩ @ 50A, 10V
Ciss (max): 1874pF @ 25V
Qg (max): 47nC @ 10V
Quality and Safety Features
RoHS3 compliant
Qualified to AEC-Q101 standard for automotive applications
Compatibility
Suitable for a wide range of power electronics applications, including DC-DC converters, motor drives, and power supplies
Application Areas
Automotive electronics
Industrial power electronics
Telecommunications equipment
Computer power supplies
Product Lifecycle
Current product, no indication of discontinuation
Replacements and upgrades may be available from onsemi
Key Reasons to Choose This Product
Excellent efficiency and power density
Reliable and rugged performance
Compact and easy-to-use surface-mount package
Wide range of power electronics applications