Manufacturer Part Number
FDD24AN06LA0
Manufacturer
onsemi
Introduction
N-Channel MOSFET transistor with PowerTrench technology in a TO-252-3 package.
Product Features and Performance
60V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
19mOhm Max On-Resistance (Rds(on)) @ 40A, 10V
1A Continuous Drain Current (Id) at 25°C ambient temperature
40A Continuous Drain Current (Id) at 25°C case temperature
1850pF Max Input Capacitance (Ciss) at 25V
75W Max Power Dissipation at 25°C case temperature
Product Advantages
Efficient power switching with low on-resistance
Suitable for high-current applications
Excellent thermal performance
Robust and reliable design
Key Technical Parameters
N-Channel MOSFET
PowerTrench technology
TO-252-3 (DPak) package
-55°C to 175°C operating temperature range
Quality and Safety Features
Compliant with relevant safety and quality standards
Rigorous testing and quality control measures
Compatibility
Suitable for a wide range of power electronics and motor control applications
Application Areas
Switching power supplies
Motor drives
Industrial automation and control systems
Automotive electronics
Product Lifecycle
Current production model, not nearing discontinuation
Replacements and upgrades available as technology evolves
Key Reasons to Choose This Product
Excellent power handling and efficiency
Robust and reliable performance
Proven PowerTrench technology
Wide operating temperature range
Surface mount package for easy integration