Manufacturer Part Number
FDD16AN08A0
Manufacturer
Fairchild (onsemi)
Introduction
High power density and high efficiency N-channel MOSFET in a compact DPak package.
Product Features and Performance
Extremely low on-resistance for high efficiency
High breakdown voltage for high power applications
High current capability up to 50A
Compact DPak surface mount package
Product Advantages
Reduced power losses for higher efficiency
Compact size for space-constrained designs
Suitable for high power, high voltage applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 75V
On-Resistance (Rds(on)): 16mΩ @ 50A, 10V
Continuous Drain Current (Id): 9A (Ta), 50A (Tc)
Input Capacitance (Ciss): 1874pF @ 25V
Power Dissipation (Tc): 135W
Quality and Safety Features
Operating temperature range: -55°C to 175°C
Robust MOSFET technology for high reliability
Compatibility
Suitable for high power, high voltage applications such as power supplies, motor drives, and industrial controls.
Application Areas
Power supplies
Motor drives
Industrial controls
High power, high voltage applications
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements and upgrades may be available from the manufacturer.
Several Key Reasons to Choose This Product
Extremely low on-resistance for high efficiency and low power losses.
High breakdown voltage and current capability for high power applications.
Compact DPak package for space-constrained designs.
Robust MOSFET technology for high reliability.
Suitable for a wide range of high power, high voltage applications.