Manufacturer Part Number
FDB86363-F085
Manufacturer
onsemi
Introduction
The FDB86363-F085 is a high-performance N-channel MOSFET transistor designed for use in automotive and industrial applications.
Product Features and Performance
80V drain-to-source voltage rating
110A continuous drain current at 25°C
4mΩ maximum on-resistance at 80A, 10V
10,000pF maximum input capacitance at 40V
300W maximum power dissipation at Tc
-55°C to 175°C operating temperature range
Product Advantages
Excellent power handling and efficiency
Robust automotive-grade construction
Compact surface-mount DPAK (TO-263) package
High reliability and long service life
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 80V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2.4mΩ @ 80A, 10V
Continuous Drain Current (Id): 110A @ 25°C
Input Capacitance (Ciss): 10,000pF @ 40V
Power Dissipation (Pd): 300W @ Tc
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Reliable PowerTrench MOSFET technology
Compatibility
Suitable for a wide range of automotive and industrial power electronics applications
Application Areas
Motor drives
Power inverters
Switch-mode power supplies
Hybrid and electric vehicles
Industrial automation and control systems
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power handling and efficiency
Robust automotive-grade construction
Compact surface-mount package
Wide operating temperature range
High reliability and long service life
Automotive and industrial-grade quality and safety features
