Manufacturer Part Number
FDB86563-F085
Manufacturer
onsemi
Introduction
The FDB86563-F085 is a high-performance, N-channel MOSFET transistor designed for use in automotive and industrial applications.
Product Features and Performance
60V Drain-to-Source Voltage (Vdss)
±20V Gate-to-Source Voltage (Vgs)
8mOhm Drain-to-Source On-Resistance (Rds(on)) at 80A, 10V
110A Continuous Drain Current (Id) at 25°C
10100pF Input Capacitance (Ciss) at 30V
333W Power Dissipation at 25°C
Product Advantages
Excellent on-state resistance for high efficiency
High current handling capability
Automotive-grade reliability and AEC-Q101 qualified
PowerTrench technology for improved performance and thermal management
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Vgs(th) (Max) @ Id: 4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) package for efficient heat dissipation
Operating temperature range: -55°C to 175°C
Compatibility
Compatible with a wide range of automotive and industrial applications
Application Areas
Automotive electronics (e.g., powertrain, body, and chassis systems)
Industrial power conversion and motor control
Switch-mode power supplies
Telecommunication and computing equipment
Product Lifecycle
The FDB86563-F085 is an active product, and onsemi continues to support it. Replacement or upgrade options may be available if the product reaches end-of-life.
Key Reasons to Choose This Product
Excellent on-state resistance and high current handling for efficient power conversion
Automotive-grade reliability and AEC-Q101 qualification for demanding applications
Efficient thermal management through PowerTrench technology and DPAK package
Wide operating temperature range and RoHS3 compliance for versatile use
Compatibility with a broad range of automotive and industrial applications