Manufacturer Part Number
FDA50N50
Manufacturer
onsemi
Introduction
High-power N-channel MOSFET transistor
Product Features and Performance
Designed for high-power switching applications
Capable of handling high voltages up to 500V
Supports continuous drain current of up to 48A at 25°C
Very low on-state resistance (RDS(on)) of 105mΩ
High input capacitance of 6460pF
Capable of dissipating up to 625W of power
Product Advantages
Excellent power handling capabilities
High voltage and current ratings
Efficient power conversion
Compact and robust TO-3P-3 package
Key Technical Parameters
Drain-Source Voltage (VDS): 500V
Gate-Source Voltage (VGS): ±20V
On-State Resistance (RDS(on)): 105mΩ
Continuous Drain Current (ID): 48A
Power Dissipation (PD): 625W
Input Capacitance (Ciss): 6460pF
Quality and Safety Features
Designed and manufactured to high quality standards
Suitable for use in harsh environments
Robust and reliable performance
Compatibility
Suitable for a wide range of high-power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Renewable energy systems
Product Lifecycle
Currently in production
No immediate plans for discontinuation
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
Excellent power handling and efficiency
High voltage and current ratings
Proven reliability and performance
Compact and robust package
Suitable for a wide range of high-power applications