Manufacturer Part Number
FDA28N50
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single Transistor - FET, MOSFET
Product Features and Performance
RoHS3 compliant
TO-3PN package
Operating temperature range: -55°C to 150°C
Drain-to-source voltage (Vdss): 500V
Gate-to-source voltage (Vgs): ±30V
On-state resistance (Rds(on)): 155mΩ @ 14A, 10V
MOSFET technology
Continuous drain current (Id): 28A @ 25°C
Input capacitance (Ciss): 5140pF @ 25V
Power dissipation (Tc): 310W
N-channel FET
Gate threshold voltage (Vgs(th)): 5V @ 250A
Gate charge (Qg): 105nC @ 10V
Through-hole mounting
Product Advantages
High voltage and current handling capabilities
Low on-state resistance
Suitable for high-power applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 500V
Gate-to-source voltage (Vgs): ±30V
On-state resistance (Rds(on)): 155mΩ
Continuous drain current (Id): 28A
Power dissipation (Tc): 310W
Quality and Safety Features
RoHS3 compliant
Wide operating temperature range: -55°C to 150°C
Compatibility
TO-3PN package
UniFET series
Application Areas
High-power, high-voltage applications
Industrial, automotive, and power electronics
Product Lifecycle
Current product
Replacements and upgrades may be available
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-state resistance for efficient power conversion
Suitable for demanding high-power applications
Robust design with wide operating temperature range
RoHS3 compliance for environmental responsibility