FDA59N25 - onsemi

Manufacturer Part Number

FDA59N25

Manufacturer

onsemi

Introduction

High-performance N-channel power MOSFET in a TO-3PN package for high-power switching and amplification applications.

Product Features and Performance

High-voltage capability up to 250V drain-source voltage

Low on-resistance of 49mΩ at 29.5A and 10V gate-source voltage

High continuous drain current of 59A at 25°C case temperature

Wide operating temperature range of -55°C to 150°C

Fast switching speed with low input capacitance of 4020pF at 25V drain-source voltage

High power dissipation capability of 392W at 25°C case temperature

Product Advantages

Optimal balance of high voltage, low on-resistance, and high current handling

Robust design for reliable operation in demanding power applications

Small package size and through-hole mounting for easy integration

Key Technical Parameters

Drain-Source Voltage (Vdss): 250V

Gate-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 49mΩ @ 29.5A, 10V

Continuous Drain Current (Id): 59A @ 25°C

Input Capacitance (Ciss): 4020pF @ 25V

Power Dissipation (Pd): 392W @ 25°C

Quality and Safety Features

RoHS3 compliant for environmental safety

Proven reliability and quality from onsemi

Compatibility

Compatible with a wide range of power electronics and control systems

Application Areas

High-power switching and amplification applications

Power supplies, motor drives, and industrial automation

Automotive and transportation electronics

Renewable energy systems

Product Lifecycle

Currently in active production with no known plans for discontinuation

Replacement and upgrade options available from onsemi

Key Reasons to Choose This Product

Excellent balance of high voltage, low on-resistance, and high current handling

Robust and reliable design for demanding power applications

Small package size and through-hole mounting for easy integration

Proven quality and performance from a trusted manufacturer, onsemi

Wide range of compatible applications and long product lifecycle