FCPF20N60 - onsemi

Manufacturer Part Number

FCPF20N60

Manufacturer

onsemi

Introduction

N-Channel MOSFET with a drain-source voltage rating of 600V

Product Features and Performance

Continuous drain current (Id) of 20A at 25°C case temperature

Low on-resistance (Rds(on)) of 190mΩ at 10A, 10V

High input capacitance (Ciss) of 3080pF at 25V

Maximum power dissipation of 39W at case temperature

Product Advantages

Suitable for high-voltage and high-current applications

Low on-resistance for efficient power conversion

High input capacitance enables fast switching

Key Technical Parameters

Drain-Source Voltage (Vdss): 600V

Gate-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 190mΩ @ 10A, 10V

Continuous Drain Current (Id): 20A @ 25°C

Quality and Safety Features

RoHS3 compliant

Operating temperature range: -55°C to 150°C

Compatibility

Designed for TO-220-3 package

Application Areas

Switching power supplies

Motor drives

Inverters

High-voltage, high-current applications

Product Lifecycle

Current product, no plans for discontinuation

Key Reasons to Choose This Product

Excellent performance in high-voltage, high-current applications

Low on-resistance for efficient power conversion

High input capacitance enables fast switching

Extensive temperature range and RoHS compliance for reliability