Manufacturer Part Number
FCPF190N65S3R0L
Manufacturer
onsemi
Introduction
High-performance N-channel Power MOSFET for power conversion and control applications
Part of the SuperFET III series
Product Features and Performance
Low on-resistance (RDS(on)) of 190 mΩ
High drain-to-source voltage (VDS) of 650 V
High continuous drain current (ID) of 17 A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance (Ciss) of 1350 pF
High power dissipation of 144 W
Fast switching characteristics
Product Advantages
Excellent performance in power conversion and control circuits
Suitable for a wide range of applications
Reliable and durable design
Key Technical Parameters
Drain-to-Source Voltage (VDS): 650 V
Gate-to-Source Voltage (VGS): ±30 V
On-Resistance (RDS(on)): 190 mΩ @ 8.5 A, 10 V
Continuous Drain Current (ID): 17 A at 25°C
Input Capacitance (Ciss): 1350 pF @ 400 V
Power Dissipation (Ptot): 144 W at 25°C
Quality and Safety Features
Meets industrial-grade quality and reliability standards
Robust design for harsh environmental conditions
Compatibility
Compatible with a wide range of power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Industrial and consumer electronics
Product Lifecycle
Current product offering
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent performance characteristics
Wide operating temperature range
High power handling capability
Reliable and durable design
Suitable for a variety of power conversion and control applications
FCPF190N65S3L1onsemiMOSFET N-CH 650V 14A TO220F-3