FCPF190N65FL1 - onsemi

Manufacturer Part Number

FCPF190N65FL1

Manufacturer

onsemi

Introduction

High-performance N-channel power MOSFET

Product Features and Performance

Operates at high voltages up to 650V

Low on-resistance of 190mΩ at 10A and 10V

High continuous drain current of 20.6A at 25°C

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 3055pF at 100V

Power dissipation up to 39W at 25°C

Product Advantages

Excellent efficiency and power handling

Reliable high-voltage operation

Compact through-hole package

Key Technical Parameters

Drain-Source Voltage (Vdss): 650V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 190mΩ @ 10A, 10V

Continuous Drain Current (Id): 20.6A @ 25°C

Input Capacitance (Ciss): 3055pF @ 100V

Power Dissipation (Pd): 39W @ 25°C

Quality and Safety Features

RoHS3 compliant

Suitable for high-voltage, high-power applications

Compatibility

Designed for through-hole mounting in TO-220 packages

Application Areas

Switching power supplies

Motor drives

Industrial and consumer electronics

Product Lifecycle

Current product, no indication of discontinuation

Replacement or upgrade options available from onsemi

Key Reasons to Choose This Product

Excellent performance in high-voltage, high-power applications

Reliable and efficient operation over wide temperature range

Compact through-hole package for easy integration

RoHS3 compliance for use in diverse applications