Manufacturer Part Number
FCH072N60F
Manufacturer
onsemi
Introduction
High power density MOSFET transistor for use in high-efficiency power conversion applications
Product Features and Performance
600V drain-source voltage
Low on-resistance of 72mOhm
High drain current rating of 52A
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge
Product Advantages
Excellent thermal performance and power dissipation
Reliable operation in high-voltage, high-current applications
Suitable for a variety of power conversion topologies
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 72mOhm
Drain Current (Id): 52A
Input Capacitance (Ciss): 8660pF
Power Dissipation (Tc): 481W
Quality and Safety Features
RoHS3 compliant
Manufactured in an ISO-certified facility
Compatibility
Compatible with a variety of power electronics applications
Application Areas
High-efficiency power conversion circuits
Switched-mode power supplies
Motor drives
Solar inverters
Industrial and automotive applications
Product Lifecycle
This product is an active, in-production part
Replacement options and upgrades may be available
Several Key Reasons to Choose This Product
Excellent performance in high-voltage, high-current applications
Reliable and efficient operation with low on-resistance
Wide operating temperature range for diverse applications
Compact and easy-to-use through-hole package
Compliance with RoHS regulations for environmental responsibility
