Manufacturer Part Number
FCH067N65S3-F155
Manufacturer
onsemi
Introduction
High-power N-channel MOSFET transistor designed for high-voltage, high-current applications
Product Features and Performance
650V drain-to-source voltage (Vdss)
67mΩ maximum on-resistance (Rds(on)) at 22A, 10V
44A continuous drain current (Id) at 25°C
3090pF maximum input capacitance (Ciss) at 400V
312W maximum power dissipation at 25°C
Product Advantages
Efficient power handling
High voltage and current capabilities
Low on-resistance for low power loss
Suitable for high-power, high-frequency applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±30V
Continuous Drain Current (Id): 44A at 25°C
On-Resistance (Rds(on)): 67mΩ at 22A, 10V
Input Capacitance (Ciss): 3090pF at 400V
Power Dissipation: 312W at 25°C
Quality and Safety Features
RoHS3 compliant
Designed for high-reliability applications
Compatibility
TO-247-3 package
Suitable for a variety of high-power, high-voltage applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial machinery
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available from onsemi
Key Reasons to Choose This Product
Excellent power handling and efficiency
High voltage and current capabilities
Low on-resistance for minimal power loss
Suitable for a wide range of high-power applications
Reliable and RoHS3 compliant design
