Manufacturer Part Number
FCH060N80-F155
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET in a TO-247-3 package
Product Features and Performance
800V drain-source voltage
60mΩ max on-resistance
56A continuous drain current at 25°C
500W power dissipation
Fast switching and low gate charge
Suitable for high-frequency, high-efficiency power conversion applications
Product Advantages
Low on-resistance for high efficiency
High blocking voltage for increased system reliability
Robust design for reliable operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 60mΩ @ 29A, 10V
Continuous Drain Current (Id): 56A @ 25°C
Input Capacitance (Ciss): 14685pF @ 100V
Power Dissipation (Tc): 500W
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with operating temperature range of -55°C to 150°C
Compatibility
Through-hole TO-247-3 package
Application Areas
High-frequency, high-efficiency power conversion applications
Switching power supplies
Motor drives
Inverters
Welding equipment
Industrial and consumer electronics
Product Lifecycle
Currently available
No known plans for discontinuation
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and power handling capabilities
Robust design for reliable operation
Broad operating temperature range
Compatibility with standard through-hole mounting
