Manufacturer Part Number
FCH041N60F
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
600V drain-to-source voltage rating
76A continuous drain current at 25°C
Very low on-state resistance of 41mΩ
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge
Product Advantages
Excellent power handling capability
Efficient power conversion and control
Reliable and robust performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 41mΩ @ 38A, 10V
Continuous Drain Current (Id): 76A at 25°C
Input Capacitance (Ciss): 14,365pF @ 100V
Power Dissipation (Pd): 595W at TC
Quality and Safety Features
RoHS3 compliant
Housed in a rugged TO-247-3 package
Compatibility
Compatible with various power electronic applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial automation
Renewable energy systems
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High power handling and efficiency
Reliable and robust performance
Wide operating temperature range
Fast switching speed and low gate charge
Suitable for a wide range of power electronic applications