Manufacturer Part Number
FCH023N65S3-F155
Manufacturer
onsemi
Introduction
High-power N-channel MOSFET in a TO-247-3 package
Product Features and Performance
650V drain-source voltage rating
23mΩ maximum on-resistance at 10V gate-source voltage
75A continuous drain current at 25°C case temperature
595W maximum power dissipation at 25°C case temperature
Low input capacitance of 7160pF
Fast switching capabilities
Product Advantages
Excellent power handling and efficiency
Robust design for demanding applications
Compact TO-247-3 package
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 23mΩ @ 37.5A, 10V
Continuous Drain Current (Id): 75A @ 25°C
Input Capacitance (Ciss): 7160pF @ 400V
Power Dissipation (Ptot): 595W @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for various power electronics and motor control applications
Application Areas
Power supplies
Motor drives
Inverters
Lighting ballasts
Industrial controls
Product Lifecycle
Current product, no plans for discontinuation
Replacement or upgrade options available if required
Key Reasons to Choose This Product
Excellent power handling and efficiency for demanding applications
Robust and reliable design in a compact TO-247-3 package
Competitive technical performance and quality
Compatibility with a wide range of power electronics applications