Manufacturer Part Number
FCH041N65EFL4
Manufacturer
onsemi
Introduction
High-performance N-channel field-effect transistor (MOSFET) in a TO-247-4 package.
Product Features and Performance
650 V drain-to-source voltage (Vdss)
41 mOhm on-resistance (Rds(on)) at 38 A, 10 V
76 A continuous drain current (Id) at 25°C case temperature (Tc)
595 W power dissipation at 25°C case temperature (Tc)
-55°C to 150°C operating temperature range
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Compact and robust TO-247-4 package
Key Technical Parameters
Vdss: 650 V
Vgs (Max): ±20 V
Rds(on) (Max) @ Id, Vgs: 41 mOhm @ 38 A, 10 V
Id (Continuous) @ 25°C: 76 A (Tc)
Ciss (Max) @ Vds: 12,560 pF @ 100 V
Qg (Max) @ Vgs: 298 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for various power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is an active and widely available MOSFET solution.
Replacements and upgrades are readily available from onsemi and other manufacturers.
Key Reasons to Choose This Product
Excellent voltage and current handling capabilities for high-power applications
Low on-resistance for efficient power conversion
Compact and robust TO-247-4 package for easy integration
Wide operating temperature range for versatile applications
RoHS3 compliance for environmentally-friendly designs
Availability and compatibility with various power electronics systems
