FCB199N65S3 - onsemi

Manufacturer Part Number

FCB199N65S3

Manufacturer

onsemi

Introduction

The FCB199N65S3 is a high-performance N-channel MOSFET transistor from onsemi, designed for a wide range of power electronics and switching applications.

Product Features and Performance

Drain-to-Source Voltage (Vdss) of 650V

On-Resistance (Rds(on)) of 199 mΩ @ 7A, 10V

Continuous Drain Current (Id) of 14A at 25°C

Input Capacitance (Ciss) of 1225 pF @ 400V

Power Dissipation (Pd) of 98W at Tc

Wide Operating Temperature Range of -55°C to 150°C

Product Advantages

High voltage and current handling capabilities

Low on-resistance for efficient power conversion

Robust design for reliable operation

Suitable for a variety of power electronics applications

Key Technical Parameters

MOSFET Technology

N-Channel FET Type

Vgs(th) of 4.5V @ 1.4mA

Drive Voltage Range of 10V

Gate Charge (Qg) of 30 nC @ 10V

Quality and Safety Features

RoHS3 compliant

DPAK (TO-263) package for surface mount assembly

Compatibility

Suitable for a wide range of power electronics and switching applications

Application Areas

Power supplies

Motor drives

Inverters

Switched-mode power supplies

Power factor correction circuits

Product Lifecycle

Current product, not nearing discontinuation

Replacements and upgrades available from onsemi

Key Reasons to Choose This Product

High voltage and current handling capabilities

Low on-resistance for efficient power conversion

Robust and reliable design

Suitable for a variety of power electronics applications

RoHS3 compliance for environmental responsibility

Availability of replacements and upgrades from the manufacturer