Manufacturer Part Number
FCB199N65S3
Manufacturer
onsemi
Introduction
The FCB199N65S3 is a high-performance N-channel MOSFET transistor from onsemi, designed for a wide range of power electronics and switching applications.
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 650V
On-Resistance (Rds(on)) of 199 mΩ @ 7A, 10V
Continuous Drain Current (Id) of 14A at 25°C
Input Capacitance (Ciss) of 1225 pF @ 400V
Power Dissipation (Pd) of 98W at Tc
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Robust design for reliable operation
Suitable for a variety of power electronics applications
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
Vgs(th) of 4.5V @ 1.4mA
Drive Voltage Range of 10V
Gate Charge (Qg) of 30 nC @ 10V
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) package for surface mount assembly
Compatibility
Suitable for a wide range of power electronics and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Power factor correction circuits
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available from onsemi
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Robust and reliable design
Suitable for a variety of power electronics applications
RoHS3 compliance for environmental responsibility
Availability of replacements and upgrades from the manufacturer
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