Manufacturer Part Number
FCB11N60TM
Manufacturer
onsemi
Introduction
High voltage N-channel power MOSFET
Designed for high-frequency, high-efficiency switching applications
Product Features and Performance
600V drain-to-source voltage
380mΩ maximum on-resistance
11A continuous drain current
Fast switching speed
Low gate charge
Low output capacitance
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Improved energy efficiency
Reduced power dissipation
Reliable high-voltage operation
Compact surface-mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 380mΩ @ 5.5A, 10V
Drain Current (Id): 11A
Input Capacitance (Ciss): 1490pF @ 25V
Power Dissipation (Ptot): 125W
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET design
Robust DPAK (TO-263) package
Compatibility
Suitable for a wide range of high-frequency, high-voltage switching applications
Application Areas
Switched-mode power supplies
Motor drives
Lighting ballasts
Industrial, medical, and consumer electronics
Product Lifecycle
Current production
Availability of replacement parts and upgrades
Key Reasons to Choose This Product
Excellent energy efficiency and low power dissipation
Reliable high-voltage operation
Compact and easy-to-use surface-mount package
Wide operating temperature range
Suitable for a variety of high-frequency, high-voltage switching applications
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