Manufacturer Part Number
FCB20N60TM
Manufacturer
onsemi
Introduction
High-voltage, low on-resistance N-channel power MOSFET
Product Features and Performance
600V drain-to-source voltage rating
20A continuous drain current rating
190mΩ maximum on-resistance
3080pF maximum input capacitance
98nC maximum gate charge
Wide operating temperature range: -55°C to 150°C
Product Advantages
Excellent power efficiency due to low on-resistance
High voltage withstand capability
Surface mount package for compact design
Key Technical Parameters
Drain-to-source voltage (Vdss): 600V
Gate-to-source voltage (Vgs): ±30V
Continuous drain current (Id): 20A at 25°C
On-resistance (Rds(on)): 190mΩ at 10A, 10V
Input capacitance (Ciss): 3080pF at 25V
Power dissipation (Tc): 208W
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) surface mount package
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Uninterruptible power supplies (UPS)
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacements and upgrades may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent power efficiency and performance due to low on-resistance
High voltage withstand capability for versatile applications
Compact surface mount package for space-constrained designs
Wide operating temperature range for reliability in harsh environments
RoHS3 compliance for environmentally friendly use