Manufacturer Part Number
FAN7382MX
Manufacturer
onsemi
Introduction
High-Voltage Gate Driver IC for IGBT and N-Channel MOSFET drives
Product Features and Performance
Half-Bridge topology support
Independent dual channel operation
Supports Gate driving for IGBTs and N-Channel MOSFETs
High side bootstrap voltage up to 600 V
Peak output current of 350mA (source), 650mA (sink)
Fast rise and fall times (60 ns / 30 ns typical)
Broad supply voltage range (10V to 20V)
Input logic compatible with TTL and CMOS levels (VIL = 0.8 V, VIH = 2.5 V)
Operating temperature range from -40°C to 150°C
Product Advantages
Enhanced ruggedness against negative transient voltage
Low propagation delay
Under-voltage lockout for both channels
3V and 5V input logic compatible
Minimal external components required due to integrated bootstrap diode
Key Technical Parameters
Supply Voltage range: 10V ~ 20V
Logic Voltage levels: VIL 0.8V, VIH 2.5V
Output current capacity: 350mA (Source), 650mA (Sink)
High side voltage (Bootstrap): Max 600V
Temperature range: -40°C ~ 150°C
Quality and Safety Features
High level of integration for reliability
Protection against under-voltage conditions
Robust thermal performance with exposed pad in 8-SOIC package
Compatibility
Suitable for driving N-Channel MOSFET and IGBT devices
Compatible with standard TTL and CMOS logic
Application Areas
Motor control
Power inverters
Power supplies
Inductive heating systems
Renewable energy systems (solar inverters, wind turbines)
Product Lifecycle
Active product status
Not near discontinuation
Assured supply availability for new designs
Several Key Reasons to Choose This Product
Designed for high-voltage, high-efficiency applications
Improved power consumption and energy efficiency
Easy integration into existing and new designs
Proven solution from a reputable manufacturer in Power Management
Comprehensive technical support and extensive application notes available from onsemi
Housed in a small 8-SOP package to minimize PCB space requirements