FAN7383MX - onsemi

Manufacturer Part Number

FAN7383MX

Manufacturer

onsemi

Introduction

The FAN7383MX is a half-bridge gate driver designed specifically for power management applications, compatible with IGBT and N-Channel MOSFET gate types, and suitable for driving synchronous channels.

Product Features and Performance

Supports half-bridge driven configuration

Synchronous channel type operation

Can drive two separate drivers

Compatible with IGBT and N-Channel MOSFET gates

Operates within a supply voltage range of 15V to 20V

Logic voltage levels: VIL at 1.2V and VIH at 2.9V

High peak output current capability (350mA source, 650mA sink)

Non-inverting input type

Capable of handling high side voltage up to 600V (bootstrap)

Fast rise and fall times (50ns rise, 30ns fall)

Designed to function in extreme temperatures ranging from -40°C to 150°C

Surface mount technology

Product Advantages

Enhanced durability and reliability in high-temperature environments

Efficient gate driving capabilities for high power applications

Robust performance with fast switching characteristics

Suitable for compact designs due to small size packaging

Key Technical Parameters

Voltage Supply: 15V ~ 20V

Logic Voltage VIL, VIH: 1.2V, 2.9V

Current Peak Output (Source, Sink): 350mA, 650mA

High Side Voltage Max (Bootstrap): 600V

Rise / Fall Time (Typ): 50ns, 30ns

Operating Temperature: -40°C ~ 150°C

Quality and Safety Features

High temperature tolerance ensuring reliability under thermal stress

Compatibility

Compatible with IGBT and N-channel MOSFET gate types

Application Areas

Industrial motor drives

Power management systems

Renewable energy inverters

High-power switching applications

Product Lifecycle

Currently active with no imminent discontinuation

Availability of replacements or upgrades should it become necessary

Several Key Reasons to Choose This Product

Exceptional thermal performance ensures reliability in various environmental conditions

High compatibility with different types of gate mechanisms (IGBT, N-Channel MOSFET)

Provides robust gate drive functionality with optimal voltage and current specifications

Features fast switching capabilities for improved performance in power management applications

Compact and efficient design suitable for diverse industrial applications