Manufacturer Part Number
EFC6605R-V-TR
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Array
Product Features and Performance
2 N-Channel MOSFET Devices
20V Drain-Source Voltage
3mOhm Typical On-Resistance @ 3A, 4.5V
10A Continuous Drain Current @ 25°C
Logic Level Gate, 2.5V Drive
8nC Gate Charge @ 4.5V
Product Advantages
Compact 6-EFCP (1.9x1.46) Surface Mount Package
High Power Density
Low On-Resistance
Logic Level Gate Drive
Key Technical Parameters
Drain-Source Voltage (Vdss): 20V
On-Resistance (Rds(on)): 13.3mOhm @ 3A, 4.5V
Drain Current (Id): 10A @ 25°C
Gate Threshold Voltage (Vgs(th)): 1.3V @ 1mA
Gate Charge (Qg): 19.8nC @ 4.5V
Quality and Safety Features
RoHS3 Compliant
Operating Temperature: 150°C
Compatibility
Suitable for Surface Mount Applications
Application Areas
Power Management
Motor Control
Switching Circuits
Product Lifecycle
Current Product
Replacements and Upgrades Available
Key Reasons to Choose
Compact Surface Mount Package
High Power Density
Low On-Resistance
Logic Level Gate Drive
RoHS Compliance
Wide Operating Temperature Range
EFC4C002NLTDGTexas InstrumentsPOWER FIELD-EFFECT TRANSISTOR