Manufacturer Part Number
EFC6611R-TF
Manufacturer
onsemi
Introduction
The EFC6611R-TF is a dual N-channel MOSFET device from onsemi, designed for a wide range of power management and switching applications.
Product Features and Performance
2 N-channel MOSFET devices in a common drain configuration
Logic level gate with 2.5V drive
Low gate charge of 100nC @ 4.5V
Surface mount package for compact design
Operates at up to 150°C junction temperature
Capable of up to 2.5W power dissipation
Product Advantages
Compact 6-CSP (1.77x3.54) package
Efficient power management with low gate charge
Reliable operation at high temperatures
Suitable for space-constrained applications
Key Technical Parameters
Package: 6-SMD, No Lead
Supplier Device Package: 6-CSP (1.77x3.54)
Packaging: Tape & Reel (TR)
Operating Temperature: 150°C (TJ)
Power Max: 2.5W
Configuration: 2 N-Channel (Dual) Common Drain
Technology: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V
Mounting Type: Surface Mount
Quality and Safety Features
ROHS3 Compliant
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power management
Switching circuits
Compact electronic designs
Product Lifecycle
Currently available, no indication of discontinuation
Several Key Reasons to Choose This Product
Compact 6-CSP package for space-constrained designs
Efficient power management with low gate charge
Reliable operation at high temperatures up to 150°C
Suitable for a wide range of power management and switching applications
ROHS3 compliant for environmentally-friendly use
