Manufacturer Part Number
EFC6602R-TR
Manufacturer
onsemi
Introduction
The EFC6602R-TR is a dual N-channel MOSFET transistor from onsemi, designed for a variety of power management and switching applications.
Product Features and Performance
Rated for 150°C maximum junction temperature
2W maximum power dissipation
Logic-level gate with 2.5V drive
55nC maximum gate charge at 4.5V
Product Advantages
Compact 6-XFBGA, FCBGA package
Surface mount design for easy PCB integration
Robust thermal performance
Efficient power switching and control
Key Technical Parameters
2 N-Channel MOSFET configuration
MOSFET technology
Logic-level gate with 2.5V drive
55nC maximum gate charge at 4.5V
Quality and Safety Features
RoHS3 compliant
Reliable operation in high-temperature environments
Compatibility
Suitable for a variety of power management and switching applications
Application Areas
Power supplies
Motor drives
Industrial control systems
Consumer electronics
Product Lifecycle
Currently available
No known plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Compact and space-efficient packaging
Robust thermal performance for high-temperature operation
Efficient power switching and control
Reliable operation and RoHS3 compliance
Versatile application potential in power management and control systems
EFC4C002NLTDGTexas InstrumentsPOWER FIELD-EFFECT TRANSISTOR