Manufacturer Part Number
BVSS138LT1G
Manufacturer
onsemi
Introduction
The BVSS138LT1G is a N-channel enhancement-mode MOSFET transistor in a SOT-23-3 (TO-236) package.
Product Features and Performance
50V Drain-Source Voltage
200mA Continuous Drain Current
5Ω Maximum On-Resistance
225mW Maximum Power Dissipation
50pF Maximum Input Capacitance
-55°C to 150°C Operating Temperature Range
Product Advantages
Compact SOT-23-3 surface mount package
Low on-resistance for efficient power switching
Wide operating temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 50V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.5Ω @ 200mA, 5V
Drain Current (Id): 200mA
Input Capacitance (Ciss): 50pF
Power Dissipation (Ptot): 225mW
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Suitable for surface mount applications
Application Areas
Power management circuits
Switching applications
Amplifier and driver circuits
Product Lifecycle
The BVSS138LT1G is an active product with no information available on discontinuation or replacement.
Key Reasons to Choose This Product
Compact surface mount package
Low on-resistance for efficient power switching
Wide operating temperature range
RoHS3 compliance for environmental safety
Suitable for reflow soldering in surface mount applications