Manufacturer Part Number
BVSS123LT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
100V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
6Ω Maximum Drain-Source On-Resistance (Rds(on)) @ 100mA, 10V
170mA Continuous Drain Current (Id) @ 25°C
20pF Maximum Input Capacitance (Ciss) @ 25V
225mW Maximum Power Dissipation (Ta)
-55°C to 150°C Operating Temperature Range
Product Advantages
Automotive and AEC-Q101 qualified
Compact SOT-23-3 (TO-236) surface mount package
High voltage and low on-resistance performance
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
8V Maximum Gate Threshold Voltage (Vgs(th)) @ 1mA
10V Drive Voltage Range for Rds(on) Specification
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with various electronic circuit designs requiring a high-voltage, low on-resistance N-Channel MOSFET
Application Areas
Automotive electronics
Industrial control systems
Power management circuits
Switching and amplifier applications
Product Lifecycle
This product is an active and available part in onsemi's product lineup.
Key Reasons to Choose
Automotive and AEC-Q101 qualification for reliable performance in harsh environments
Compact surface mount package for space-constrained designs
High voltage and low on-resistance characteristics enabling efficient power switching
Wide operating temperature range for use in diverse applications