BVSS123LT1G - onsemi

Manufacturer Part Number

BVSS123LT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

N-Channel MOSFET Transistor

Product Features and Performance

100V Drain to Source Voltage (Vdss)

±20V Gate to Source Voltage (Vgs)

6Ω Maximum Drain-Source On-Resistance (Rds(on)) @ 100mA, 10V

170mA Continuous Drain Current (Id) @ 25°C

20pF Maximum Input Capacitance (Ciss) @ 25V

225mW Maximum Power Dissipation (Ta)

-55°C to 150°C Operating Temperature Range

Product Advantages

Automotive and AEC-Q101 qualified

Compact SOT-23-3 (TO-236) surface mount package

High voltage and low on-resistance performance

Key Technical Parameters

MOSFET Technology

N-Channel FET Type

8V Maximum Gate Threshold Voltage (Vgs(th)) @ 1mA

10V Drive Voltage Range for Rds(on) Specification

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with various electronic circuit designs requiring a high-voltage, low on-resistance N-Channel MOSFET

Application Areas

Automotive electronics

Industrial control systems

Power management circuits

Switching and amplifier applications

Product Lifecycle

This product is an active and available part in onsemi's product lineup.

Key Reasons to Choose

Automotive and AEC-Q101 qualification for reliable performance in harsh environments

Compact surface mount package for space-constrained designs

High voltage and low on-resistance characteristics enabling efficient power switching

Wide operating temperature range for use in diverse applications