Manufacturer Part Number
BSP16T1G
Manufacturer
onsemi
Introduction
Discrete semiconductor product
Single bipolar junction transistor (BJT)
PNP transistor
Product Features and Performance
Operating temperature range: -65°C to 150°C
Maximum power: 1.5W
Collector-emitter breakdown voltage: 300V
Maximum collector current: 100mA
Maximum collector cutoff current: 50μA
Collector-emitter saturation voltage: 2V @ 5mA, 50mA
Minimum DC current gain: 30 @ 50mA, 10V
Transition frequency: 15MHz
Product Advantages
Suitable for high-voltage, high-power applications
Compact surface mount package (SOT-223)
Robust operating temperature range
Key Technical Parameters
Collector-emitter breakdown voltage: 300V
Collector current: 100mA
Collector cutoff current: 50μA
DC current gain: 30 @ 50mA, 10V
Transition frequency: 15MHz
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
Compatible with TO-261-4, TO-261AA packages
Application Areas
High-voltage, high-power circuits
Switching applications
Amplifier circuits
Product Lifecycle
Current product, no discontinuation planned
Replacement or upgrade options available
Key Reasons to Choose
High-voltage and high-power capability
Robust temperature range
Compact surface mount package
RoHS3 compliance for environmental safety