Manufacturer Part Number
BSP149H6327XTSA1
Manufacturer
Infineon Technologies
Introduction
High-voltage, high-performance MOSFET transistor
Suitable for a wide range of power electronics applications
Product Features and Performance
Drain-to-Source Voltage (Vdss) up to 200V
Gate-to-Source Voltage (Vgs) up to ±20V
Low On-Resistance (Rds(on)) of 1.8Ω at 660mA, 10V
Continuous Drain Current (Id) up to 660mA at 25°C
Wide Operating Temperature Range of -55°C to 150°C
Compact TO-261-4 (TO-261AA) package
Product Advantages
Excellent power handling capabilities
High voltage and current rating
Low on-state resistance for efficient power conversion
Suitable for high-frequency, high-efficiency power electronics
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.8Ω @ 660mA, 10V
Continuous Drain Current (Id): 660mA at 25°C
Input Capacitance (Ciss): 430pF @ 25V
Power Dissipation (Max): 1.8W
Quality and Safety Features
ROHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power electronics applications, including power supplies, motor drives, and other power conversion circuits
Application Areas
Power supplies
Motor drives
Switch-mode power supplies
Voltage regulators
High-frequency power conversion circuits
Product Lifecycle
This product is an active and widely used MOSFET transistor
Replacements and upgrades are readily available from Infineon and other manufacturers
Several Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-state resistance for efficient power conversion
Wide operating temperature range
Compact and robust TO-261-4 (TO-261AA) package
Proven reliability and quality from Infineon Technologies