Manufacturer Part Number
BSP170PH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
The BSP170PH6327XTSA1 is a P-channel MOSFET transistor from Infineon Technologies. It is part of the SIPMOS series and designed for surface mount applications.
Product Features and Performance
P-channel MOSFET transistor
Drain to Source Voltage (Vdss) of 60V
Maximum Gate-Source Voltage (Vgs) of ±20V
On-state Resistance (Rds(on)) of 300mΩ at 1.9A, 10V
Continuous Drain Current (Id) of 1.9A at 25°C
Input Capacitance (Ciss) of 410pF at 25V
Power Dissipation (Pd) of 1.8W at 25°C
Operating Temperature range of -55°C to 150°C
Product Advantages
Low on-state resistance for efficient power handling
High voltage and current capabilities
Small surface mount package for compact designs
Suitable for a wide range of applications
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
Threshold Voltage (Vgs(th)) of 4V at 250μA
Gate Charge (Qg) of 14nC at 10V
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
TO-261-4, TO-261AA package
Tape and Reel packaging
Application Areas
Power management
Motor control
Industrial electronics
Consumer electronics
Product Lifecycle
Current product
Replacement parts and upgrades available
Key Reasons to Choose This Product
Excellent power handling capabilities
Efficient performance with low on-state resistance
Compact surface mount package for space-constrained designs
Wide operating temperature range
RoHS compliance for environmentally friendly applications