BCW30LT1G - onsemi

Manufacturer Part Number

BCW30LT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), PNP type

Product Features and Performance

Compact SOT-23-3 (TO-236) surface mount package

Wide operating temperature range: -65°C to 150°C

Low power dissipation: 300 mW max

High collector-emitter breakdown voltage: 32 V max

High collector current: 100 mA max

Low collector cutoff current: 100 nA max

Low collector-emitter saturation voltage: 300 mV max

High DC current gain: 215 min

Product Advantages

Reliable and robust performance

Suitable for a wide range of applications

Compact and space-saving design

Compliant with RoHS directive

Key Technical Parameters

Package: TO-236-3, SC-59, SOT-23-3

Mounting Type: Surface Mount

Operating Temperature: -65°C to 150°C

Power Dissipation: 300 mW max

Collector-Emitter Breakdown Voltage: 32 V max

Collector Current: 100 mA max

Collector Cutoff Current: 100 nA max

Collector-Emitter Saturation Voltage: 300 mV max

DC Current Gain: 215 min

Quality and Safety Features

RoHS3 compliant

Reliable and robust design

Compatibility

Suitable for a wide range of electronic circuit applications

Application Areas

Amplifiers

Switches

Drivers

Logic gates

General-purpose transistor applications

Product Lifecycle

Current product offering

Replacement and upgrade options available

Key Reasons to Choose This Product

Reliable and robust performance

Wide operating temperature range

Compact and space-saving design

Compliant with RoHS directive

Suitable for a wide range of applications