BCW33LT1G - onsemi

Manufacturer Part Number

BCW33LT1G

Manufacturer

onsemi

Introduction

The BCW33LT1G is a high-voltage, high-gain NPN bipolar junction transistor (BJT) in a small SOT-23-3 (TO-236) surface-mount package.

Product Features and Performance

High collector-emitter breakdown voltage of 32V

High collector current capacity of 100mA

Low collector-emitter saturation voltage of 250mV @ 10mA collector current

High DC current gain (hFE) of 420 min @ 2mA collector current

Wide operating temperature range of -55°C to 150°C

Product Advantages

Compact surface-mount package

High breakdown voltage and current handling capability

Low saturation voltage for efficient operation

High current gain for amplification and switching applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 32V

Collector Current (IC): 100mA

Collector-Emitter Saturation Voltage (VCE(sat)): 250mV @ 10mA

DC Current Gain (hFE): 420 min @ 2mA, 5V

Quality and Safety Features

RoHS3 compliant

Reliable and robust design

Compatibility

Compatible with standard SOT-23-3 (TO-236) footprint and assembly processes

Application Areas

General-purpose amplifier and switch applications

Low-power analog and digital circuits

Automotive and industrial electronics

Product Lifecycle

The BCW33LT1G is an active product and is not nearing discontinuation.

Replacement or upgrade options may be available from onsemi.

Key Reasons to Choose This Product

High voltage and current handling capabilities

Excellent DC current gain for efficient amplification

Low saturation voltage for low power dissipation

Compact surface-mount package for space-constrained designs

Wide operating temperature range for harsh environments

RoHS3 compliance for use in restricted applications