BCW32LT1G - onsemi

Manufacturer Part Number

BCW32LT1G

Manufacturer

onsemi

Introduction

The BCW32LT1G is a discrete NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications.

Product Features and Performance

Operating temperature range: -55°C to 150°C

Power rating: 225 mW

Collector-emitter breakdown voltage: 32 V

Collector current (max): 100 mA

Collector cutoff current (max): 100 nA

Collector-emitter saturation voltage: 250 mV @ 500 μA, 10 mA

DC current gain (hFE): Minimum 200 @ 2 mA, 5 V

Product Advantages

Excellent thermal and electrical performance

Suitable for a wide range of applications

Small footprint and surface mount package

Key Technical Parameters

Transistor type: NPN

Package: SOT-23-3 (TO-236)

Mounting type: Surface mount

Quality and Safety Features

RoHS3 compliant

Reliable performance and long lifespan

Compatibility

Compatible with various electronic circuits and systems

Application Areas

General-purpose amplifier and switching applications

Suitable for use in consumer electronics, industrial equipment, and more

Product Lifecycle

This product is actively supported and available for purchase.

Key Reasons to Choose This Product

Reliable and consistent performance

Compact and space-saving design

Suitable for a wide range of applications

Meets RoHS3 compliance standards