Manufacturer Part Number
2V7002LT1G
Manufacturer
onsemi
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
60V Drain-to-Source Voltage (Vdss)
5Ω Maximum On-Resistance (Rds(on)) at 500mA, 10V
115mA Continuous Drain Current (Id) at 25°C
50pF Maximum Input Capacitance (Ciss) at 25V
225mW Maximum Power Dissipation at 25°C
Operating Temperature Range: -55°C to 150°C
Product Advantages
Automotive-qualified (AEC-Q101)
ROHS3 Compliant
Small SOT-23-3 (TO-236) Package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 2.5V at 250μA
On-Resistance (Rds(on)): 7.5Ω at 500mA, 10V
Continuous Drain Current (Id): 115mA at 25°C
Input Capacitance (Ciss): 50pF at 25V
Power Dissipation (Max): 225mW at 25°C
Quality and Safety Features
AEC-Q101 Automotive Qualified
ROHS3 Compliant
Compatibility
Compatible with a variety of electronic circuits and applications requiring a N-Channel MOSFET transistor
Application Areas
Automotive electronics
Industrial control
Power management
General-purpose switching and amplification
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgrade options may be available from onsemi, but specific details should be verified.
Key Reasons to Choose This Product
Automotive-qualified performance and reliability
Small and compact SOT-23-3 (TO-236) package
Low on-resistance and high current capability
Wide operating temperature range
ROHS3 compliance for environmental responsibility