2N5401YTA - onsemi

Manufacturer Part Number

2N5401YTA

Manufacturer

onsemi

Introduction

The 2N5401YTA is a PNP bipolar junction transistor (BJT) manufactured by onsemi.

Product Features and Performance

Operates at high frequencies up to 400 MHz

Provides a maximum collector current of 600 mA

Offers a high DC current gain (hFE) of at least 60 at 10 mA, 5 V

Supports a maximum collector-emitter breakdown voltage of 150 V

Capable of dissipating up to 625 mW of power

Product Advantages

Suitable for high-frequency analog and switching applications

Provides reliable and stable performance

Offers a wide operating temperature range of -55°C to 150°C

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 150 V

Collector Current (Max): 600 mA

Power Dissipation (Max): 625 mW

DC Current Gain (hFE) (Min): 60 @ 10 mA, 5 V

Transition Frequency: 400 MHz

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Housed in a TO-92-3 package with formed leads

Compatibility

Suitable for a variety of through-hole mounting applications

Application Areas

Analog and digital circuits

Switching applications

High-frequency amplifiers

Telecommunications equipment

Product Lifecycle

The 2N5401YTA is an active product and is not nearing discontinuation.

Replacement or upgrade options may be available, but the 2N5401YTA remains a widely used and supported transistor.

Key Reasons to Choose This Product

High-frequency performance up to 400 MHz

Robust power handling capability of 625 mW

Wide operating temperature range of -55°C to 150°C

Reliable and stable transistor characteristics

RoHS3 compliance for environmental sustainability

Availability in the industry-standard TO-92-3 package