2N5401YBU - onsemi

Manufacturer Part Number

2N5401YBU

Manufacturer

onsemi

Introduction

PNP bipolar junction transistor (BJT)

Suitable for general-purpose amplifier and switching applications

Product Features and Performance

High-frequency performance up to 400 MHz

Power rating of 625 mW

Collector-emitter breakdown voltage of 150 V

Product Advantages

Robust and reliable construction

Suitable for a wide range of operating temperatures (-55°C to 150°C)

Compact TO-92-3 package

Key Technical Parameters

Collector current (maximum): 600 mA

DC current gain (minimum): 60 @ 10 mA, 5 V

Collector-emitter saturation voltage (maximum): 500 mV @ 5 mA, 50 mA

Quality and Safety Features

RoHS3 compliant

Manufactured in a quality-controlled environment

Compatibility

Can be used as a replacement for various PNP BJT transistors in through-hole applications

Application Areas

General-purpose amplifier circuits

Switching circuits

Audio applications

Instrumentation and control systems

Product Lifecycle

This is an active and widely available product, with no plans for discontinuation in the near future.

Replacement and upgrade options are readily available from onsemi and other reputable manufacturers.

Key Reasons to Choose This Product

High-frequency performance for a wide range of applications

Robust and reliable construction for long-term use

Compatibility with various circuit designs and applications

Widespread availability and easy replacement options