2N5401RLRAG - onsemi

Manufacturer Part Number

2N5401RLRAG

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT)

Single Transistor

Product Features and Performance

TO-92 (TO-226) package

Operating temperature range: -55°C to 150°C

Power rating: 625 mW

Collector-Emitter Breakdown Voltage: 150 V

Collector Current (Max): 600 mA

Collector Cutoff Current (Max): 50 nA

Collector-Emitter Saturation Voltage: 500 mV @ 5 mA, 50 mA

DC Current Gain (hFE): 60 min @ 10 mA, 5 V

Transition Frequency: 300 MHz

Product Advantages

High voltage capability

High current handling

Reliable performance across wide temperature range

Suitable for various amplifier and switching applications

Key Technical Parameters

Transistor Type: PNP

Package: TO-226-3, TO-92-3 Long Body (Formed Leads)

Mounting Type: Through Hole

Packaging: Tape & Reel (TR)

Quality and Safety Features

Designed and manufactured to meet industry standards

Robust construction for reliable operation

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Amplifier circuits

Switching circuits

General-purpose electronic applications

Product Lifecycle

This product is an established and mature design

Replacement or upgraded products may be available

Several Key Reasons to Choose This Product

High voltage and current handling capabilities

Reliable performance across wide temperature range

Proven design and manufacturing quality

Compatibility with a variety of electronic circuits and systems

Availability in standard packaging options