Manufacturer Part Number
1HP04CH-TL-W
Manufacturer
onsemi
Introduction
This is a P-channel MOSFET transistor from onsemi, a leading manufacturer of discrete semiconductor products.
Product Features and Performance
Low on-resistance (Rds(on)) of 18 ohms at 80 mA, 10 V
High drain-to-source voltage (Vdss) of 100 V
Wide gate-to-source voltage (Vgs) range of ±20 V
Low input capacitance (Ciss) of 14 pF at 20 V
Continuous drain current (Id) of 170 mA at 25°C
Threshold voltage (Vgs(th)) of 2.6 V at 100 μA
Gate charge (Qg) of 0.9 nC at 10 V
Product Advantages
Excellent power handling capabilities
Efficient switching performance
Reliable and stable operation
Compact surface mount package
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: P-Channel
Package: TO-236-3, SC-59, SOT-23-3
Operating Temperature: 150°C (TJ)
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
This MOSFET is compatible with a wide range of electronic circuits and systems that require a high-performance, P-channel switching device.
Application Areas
Power management circuits
Switching applications
Amplifiers
Motor control
Industrial automation
Product Lifecycle
This product is currently in production and readily available. onsemi continues to support this device, and there are no plans for discontinuation in the near future.
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and stable operation over a wide temperature range
Compact surface mount package for space-constrained designs
Compatibility with a wide range of electronic circuits and systems
Compliance with RoHS3 regulations for environmental responsibility