Manufacturer Part Number
STP12NM50FP
Manufacturer
STMicroelectronics
Introduction
Discrete semiconductor product
Single transistor FET, MOSFET
Product Features and Performance
N-channel MOSFET
500V drain-source voltage
12A continuous drain current at 25°C
350mΩ on-resistance at 6A, 10V
1000pF input capacitance at 25V
35W maximum power dissipation at Tc
5V gate-source threshold voltage at 50A
10V maximum drive voltage
39nC gate charge at 10V
Product Advantages
High voltage and current handling
Low on-resistance
Compact TO-220FP package
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 350mΩ
Drain Current (Id): 12A
Input Capacitance (Ciss): 1000pF
Power Dissipation (Ptot): 35W
Quality and Safety Features
RoHS3 compliant
Wide operating temperature range: -65°C to 150°C
Compatibility
Through-hole TO-220-3 package
Application Areas
Switch-mode power supplies
Motor drives
Industrial controls
Lighting ballasts
Product Lifecycle
Current product, not nearing discontinuation
Replacement/upgrade options available
Key Reasons to Choose
High voltage and current capability
Low on-resistance for efficiency
Compact and efficient TO-220FP package
Proven reliability and performance
STP130N10STMicroelectronics