Manufacturer Part Number
STP12NM50N
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel power MOSFET
Product Features and Performance
Optimized for high-frequency switching applications
Low on-resistance and fast switching capabilities
Robust avalanche capability
Suitable for high-voltage power conversion and control applications
Product Advantages
Excellent power density
High efficiency
Reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 500V
Vgs (Max): ±25V
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Current Continuous Drain (Id) @ 25°C: 11A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 50 V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Quality and Safety Features
ROHS3 Compliant
Operating Temperature: -55°C ~ 150°C (TJ)
Compatibility
Suitable for Through Hole Mounting
Application Areas
High-frequency switching applications
High-voltage power conversion and control
Product Lifecycle
Current production, no discontinuation planned
Several Key Reasons to Choose This Product
Excellent power density and high efficiency
Robust avalanche capability for reliable performance
Optimized for high-frequency switching applications
Wide operating temperature range of -55°C to 150°C
STP13DN10F3STMicroelectronics