STP12NM50N - STMicroelectronics

Manufacturer Part Number

STP12NM50N

Manufacturer

STMicroelectronics

Introduction

High-voltage, high-performance N-channel power MOSFET

Product Features and Performance

Optimized for high-frequency switching applications

Low on-resistance and fast switching capabilities

Robust avalanche capability

Suitable for high-voltage power conversion and control applications

Product Advantages

Excellent power density

High efficiency

Reliable performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 500V

Vgs (Max): ±25V

Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V

Current Continuous Drain (Id) @ 25°C: 11A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 50 V

Power Dissipation (Max): 100W (Tc)

Vgs(th) (Max) @ Id: 4V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 10V

Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V

Quality and Safety Features

ROHS3 Compliant

Operating Temperature: -55°C ~ 150°C (TJ)

Compatibility

Suitable for Through Hole Mounting

Application Areas

High-frequency switching applications

High-voltage power conversion and control

Product Lifecycle

Current production, no discontinuation planned

Several Key Reasons to Choose This Product

Excellent power density and high efficiency

Robust avalanche capability for reliable performance

Optimized for high-frequency switching applications

Wide operating temperature range of -55°C to 150°C