Manufacturer Part Number
1HN04CH-TL-W
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
100V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
8Ohm (Max) Drain-Source On-Resistance (Rds On) at 140mA, 10V
270mA (Ta) Continuous Drain Current (Id)
15pF (Max) Input Capacitance (Ciss) at 20V
6V (Max) Gate Threshold Voltage (Vgs(th)) at 100A
9nC (Max) Gate Charge (Qg) at 10V
Product Advantages
High Voltage Operation
Low On-Resistance
Small Footprint Surface Mount Package
Key Technical Parameters
MOSFET (Metal Oxide) Technology
N-Channel FET Type
TO-236-3, SC-59, SOT-23-3 Package
Tape & Reel (TR) Packaging
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with various electronic circuits and systems
Application Areas
Suitable for various power management and control applications
Product Lifecycle
Currently available product
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
High voltage capability
Low on-resistance for efficient power handling
Compact surface mount package
RoHS compliance for environmentally friendly use