Manufacturer Part Number
IRF7832Z
Manufacturer
Infineon Technologies
Introduction
The IRF7832Z is a discrete N-Channel MOSFET transistor designed for a wide range of power switching and control applications.
Product Features and Performance
High current capability up to 21A continuous at 25°C
Low on-resistance of 3.8mOhm max at 20A, 10V
Fast switching speed with low gate charge of 45nC max at 4.5V
Wide operating temperature range of -55°C to 150°C
Supports gate voltages up to ±20V
Product Advantages
Excellent thermal performance and power handling
Efficient power conversion with low conduction losses
Reliable and robust design for demanding applications
Flexible gate drive voltage options
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 3.8mOhm max
Continuous Drain Current (Id): 21A at 25°C
Input Capacitance (Ciss): 3860pF max at 15V
Power Dissipation (Pd): 2.5W at 25°C
Quality and Safety Features
RoHS non-compliant
8-SOIC package for surface mount assembly
Compatibility
Compatible with a wide range of power electronics and control applications
Application Areas
Power supplies
Motor drives
Lighting controls
Industrial automation
Telecommunications equipment
Product Lifecycle
Current product
Replacement and upgrade options available
Key Reasons to Choose
High power density and efficiency
Robust and reliable performance
Flexible gate drive options
Proven track record in demanding applications
IRF7834TR MOSIR