Manufacturer Part Number
IRF7832TRPBF
Manufacturer
Infineon Technologies
Introduction
The IRF7832TRPBF is a discrete N-channel power MOSFET from Infineon Technologies. It is part of the HEXFET series and designed for a variety of power management and switching applications.
Product Features and Performance
30V drain-to-source voltage rating
20A continuous drain current at 25°C
4mΩ maximum on-resistance at 20A, 10V
Fast switching speed
Low gate charge of 51nC at 4.5V
Wide operating temperature range of -55°C to 155°C
Product Advantages
Low on-resistance for efficient power conversion
High current handling capability
Optimized for fast, efficient switching
Robust design for reliable operation
Key Technical Parameters
Drain-to-source voltage (Vdss): 30V
Maximum gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 4mΩ @ 20A, 10V
Drain current (Id): 20A continuous at 25°C
Input capacitance (Ciss): 4310pF @ 15V
Power dissipation (Pd): 2.5W
Quality and Safety Features
RoHS3 compliant
8-SOIC package for surface mount assembly
Compatibility
Suitable for a wide range of power management, switching, and control applications.
Application Areas
Switch-mode power supplies
Motor drives
Lighting control
Industrial automation
Telecommunications equipment
Product Lifecycle
The IRF7832TRPBF is an active product, with no indication of discontinuation. Replacement or upgrade options may be available from Infineon Technologies.
Several Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Proven reliability and robustness
Optimized for efficient, fast switching
Versatile enough for a wide range of applications
Readily available in standard packaging
IRF7832TRPBF MOSIRF
IRF7832PBFInternational RectifierHEXFET POWER MOSFET