12A02MH-TL-E - onsemi

Manufacturer Part Number

12A02MH-TL-E

Manufacturer

onsemi

Introduction

The 12A02MH-TL-E is a high-performance PNP bipolar junction transistor (BJT) from onsemi, designed for a variety of electronic applications.

Product Features and Performance

Operates at a maximum collector-emitter voltage of 12V

Supports a maximum collector current of 1A

Exhibits a minimum DC current gain (hFE) of 300 at 10mA and 2V

Achieves a transition frequency of 450MHz

Compact surface mount SC-70 package

Product Advantages

High power handling capacity of 600mW

Low collector-emitter saturation voltage of 240mV at 20mA and 400mA

Excellent high-frequency performance

RoHS3 compliant for environmentally-friendly use

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 12V

Collector Current (IC): 1A

Collector Cutoff Current (ICBO): 100nA

Transistor Type: PNP

Quality and Safety Features

Compliant with RoHS3 environmental directive

Reliable performance in a wide temperature range up to 150°C

Compatibility

Compatible with a variety of electronic circuits and systems

Application Areas

Amplifiers

Switches

Drivers

Inverters

Power supplies

Product Lifecycle

Currently in active production

Replacement or upgrade options available from onsemi

Key Reasons to Choose This Product

High power handling and current capability

Excellent high-frequency performance

Low saturation voltage for efficient operation

Compact and reliable surface mount packaging

RoHS3 compliance for environmentally-friendly use

Availability of replacement and upgrade options from the manufacturer