MMBTA28-7-F - Diodes Incorporated

Manufacturer Part Number

MMBTA28-7-F

Manufacturer

Diodes Incorporated

Introduction

This product is a Bipolar Junction Transistor (BJT) that belongs to the Darlington transistor family. It is designed for a variety of automotive and general-purpose applications.

Product Features and Performance

Power Rating: 300 mW

Collector-Emitter Breakdown Voltage: 80 V

Collector Current (Max): 500 mA

Collector Cutoff Current (Max): 500 nA

Collector-Emitter Saturation Voltage: 1.5 V @ 100 mA, 100 μA

DC Current Gain (hFE): 10,000 @ 100 mA, 5 V

Transition Frequency: 125 MHz

Product Advantages

High current gain for low-power amplifier and switch applications

Robust and reliable performance for automotive and industrial uses

Compact surface-mount package for efficient board layout

Key Technical Parameters

Bipolar Junction Transistor (BJT) type: NPN Darlington

Package: SOT-23-3

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Compatibility

Suitable for various automotive, industrial, and general-purpose electronic circuits and systems

Application Areas

Low-power amplifiers and switches

Automotive electronics

Industrial control and instrumentation

General-purpose electronic circuits

Product Lifecycle

This product is currently in active production and is not nearing discontinuation.

Replacement or upgraded products may be available in the future as technology advances.

Key Reasons to Choose This Product

High current gain for efficient low-power circuit design

Robust and reliable performance for harsh environments

Compact surface-mount package for space-constrained applications

Compliance with automotive and industrial quality standards