BDW94CFP - STMicroelectronics

Manufacturer Part Number

BDW94CFP

Manufacturer

STMicroelectronics

Introduction

This product is a PNP Darlington transistor with high current gain and high breakdown voltage, suitable for use in power amplifier and switching applications.

Product Features and Performance

High current gain: DC current gain (hFE) of at least 750 at 5A and 3V

High breakdown voltage: Collector-Emitter breakdown voltage of up to 100V

High power handling: Maximum power dissipation of 33W

Wide operating temperature range: Up to 150°C junction temperature

Product Advantages

Excellent power handling capability

High current gain for efficient switching and amplification

Robust design for reliable operation

Compact TO-220FP package for easy integration

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 100V

Collector Current (Max): 12A

Collector Cutoff Current (Max): 1mA

Collector-Emitter Saturation Voltage (Max): 3V @ 100mA, 10A

Junction Temperature (Max): 150°C

Quality and Safety Features

RoHS3 compliant for environmental safety

Reliable through-hole mounting

Compatibility

This transistor is compatible with a wide range of electronic circuits and applications that require a high-power, high-gain PNP Darlington transistor.

Application Areas

Power amplifiers

Motor drives

Switching power supplies

Industrial control systems

Product Lifecycle

The BDW94CFP is an active and widely available product from STMicroelectronics. There are no immediate plans for discontinuation, and replacement or upgrade options are readily available.

Key Reasons to Choose This Product

Excellent power handling and high current gain for efficient switching and amplification

Robust design and wide operating temperature range for reliable operation in demanding applications

Compact and compatible package for easy integration into electronic circuits

RoHS3 compliance for environmental safety

Availability and ongoing support from a reputable manufacturer, STMicroelectronics