Manufacturer Part Number
CY7C1514KV18-333BZXI
Manufacturer
Infineon Technologies
Introduction
The CY7C1514KV18-333BZXI is a high-performance, high-density SRAM (Synchronous Random Access Memory) module from Infineon Technologies. It is designed to provide reliable and efficient data storage solutions for a wide range of applications, including networking, telecommunications, and industrial equipment.
Product Features and Performance
Memory Type: Volatile SRAM
Memory Format: SRAM
Technology: Synchronous SRAM, QDR II
Memory Size: 72Mbit
Memory Organization: 2M x 36
Memory Interface: Parallel
Clock Frequency: 333 MHz
Supply Voltage: 1.7V to 1.9V
Operating Temperature: -40°C to 85°C
Product Advantages
High-density and high-performance SRAM solution
Synchronous operation for improved data transfer rates
Reliable and stable performance in a wide range of operating conditions
Compact surface-mount package for efficient board layout
Key Reasons to Choose This Product
Robust and reliable SRAM solution for mission-critical applications
Excellent performance and power efficiency
Seamless integration with a variety of system architectures
Backed by Infineon's reputation for quality and innovation
Quality and Safety Features
Rigorous quality control and testing processes
Compliance with industry standards and regulations
Robust design and packaging for reliable operation
Compatibility
The CY7C1514KV18-333BZXI is designed to be compatible with various system architectures and can be integrated into a wide range of electronic devices and equipment.
Application Areas
Networking and telecommunications equipment
Industrial automation and control systems
Embedded systems and computing devices
Military and aerospace applications
Product Lifecycle
The CY7C1514KV18-333BZXI is an active product in Infineon's portfolio. There are no known plans for discontinuation at this time. Customers are advised to contact our website's sales team for the latest information on product availability and potential alternative models.