Manufacturer Part Number
CY7C1514KV18-250BZI
Manufacturer
Infineon Technologies
Introduction
High-speed SRAM (Synchronous Quad Data Rate II) memory device
Designed for networking, telecommunications, and other high-performance applications
Product Features and Performance
72Mbit of storage capacity
2M x 36 memory organization
250MHz clock frequency
Parallel memory interface
Supports SRAM Synchronous, QDR II technology
Product Advantages
High-speed performance for demanding applications
Efficient use of board space with compact 165-FBGA (13x15) package
Wide operating temperature range of -40°C to 85°C
Key Technical Parameters
Supply voltage: 1.7V to 1.9V
Package: 165-LBGA
Mounting type: Surface mount
Quality and Safety Features
RoHS non-compliant
Compatibility
Suitable for networking, telecommunications, and other high-performance applications
Application Areas
Networking equipment
Telecommunications infrastructure
High-performance computing systems
Product Lifecycle
Current product offering, no information on discontinuation or replacements
Several Key Reasons to Choose This Product
High-speed performance for demanding applications
Efficient use of board space with compact package
Wide operating temperature range for versatile deployment
Extensive experience and expertise of Infineon Technologies as the manufacturer